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 SBP13005D
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25 Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 4.0 8.0 2.0 4.0 75 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.67 62.5 Units /W /W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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SBP13005D
Electrical Characteristics (TC=25
Symbol ICEV VCEO(SUS) Parameter Colletor Cut-off Current ( VBE = -1.5V ) Collector-Emitter Sustaining Voltage
unless otherwise noted)
Value Test Conditions VCE = 700V VCE = 700V ,TC = 100 IB = 0, IC = 10mA IC =1.0A, IB = 0.2A Min 400 Typ Max 1.0 5.0 0.5 0.6 1.0 10 10 1.2 1.6 40 30 3.6 1.6 2.5
Units mA V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2.0A, IB = 0.5A IC = 4.0A, IB = 1.0A
V
VBE(sat)
Base-Emitter Saturation Voltage
IC =1.0A, IB = 0.2A IC = 2.0A, IB = 0.5A
V
hFE
DC Current Gain
IC = 1.0A, VCE = 5V IC = 2.0A, VCE = 5V
ts tf fT VF COB
Storage Time Fall Time Current Gain Bandwidth Product Diode Forward Voltage Output Capacitance
IC = 2.0A, VCC = 125V IB1 = 0.4A, IB2 = -0.4A TP = 25us IC=0.5A ,VCE=10V IF=2A IC=0.5A ,VCE=10V 4 6.5 -
MHz V pF
Note: Pulse Test : Pulse width 300, Duty cycle 2%
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.
SBP13005D
Fig. 1 DC Current Gain
Fig. 2 Saturation Voltage
Fig. 3 Power Derating
Fig. 4 Safe Operation Area
Fig. 5 Collect output capacitance
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SBP13005D
TO-220 Package Dimension
4/4
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